ENS1040栅电荷测试系统
功能指标
测量参数 | 技术条件 |
开启栅电荷QgOn | Id=1 to 100Amps |
存储电荷Qgs | Vdd=5 to 95v |
平台电荷Qgd | Vg=+/-1 to+/-19V |
平台电压PlateauVoltage | Ig=0.1 to 10ma Id@threshold=100 to 1000ua |
导通电阻RdsOn | Qg=0.5 to 500nc |
栅电阻Rg | Rds(0n)=0.001 to 2.0Ohms |
阈值电压GateThresholdVotage | Gate/Drainwaveform Capture/storage |